Polysilicon Reactive Ion Etching (Poly-Si RIE)

    Kuan-Neng Chen (Manager), 進章 胡 (Operator) & 正維 李 (Operator)

Equipment/facility: Equipment

  • Location

    固態電子系統大樓 1樓116實驗室

    Taiwan

Equipments Details

Description

功能:
蝕刻複晶矽、單晶矽等材料
(試片不得含有摻雜及金屬)
重要規格: (1) 包含兩個真空邦浦、一個真空室,可選擇以手動或自動模式操作. (2) RF產生器最大可輸出300瓦,頻率13.56MHz,本蝕刻系統有活性離子蝕刻(有方向性)可供選擇,真空室用途分述如下:真空室:可進入CF4、PO2、SF6、CHF3等氣體蝕刻複晶矽、單晶矽等材料
Photo associated with equipment

Details

NameSAMCO RIE-10N
Acquisition date1/09/95
Manufacturers Samco Inc.

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