Plasma-Enhanced Chemical Vapor Deposition(PECVD)

Equipment/facility: Equipment

  • Location

    固態電子系統大樓 1樓 116實驗室

    Taiwan

Equipments Details

Description

重要規格: (1) 可使用晶圓尺寸 : 破片至4吋. (2)單腔體 : Chamber溫度300°C. (3) 使用的氣體包括:N2O、NH3、CF4、SiH4+Ar、N2等,可提供低溫之SiO2及Si3N4等薄膜沈積
服務項目: (1)成長SiO2及Si3N4等薄膜
Photo associated with equipment

Details

NameSamco Plasma-Enhanced Chemical Vapor Deposition(PECVD)
Acquisition date1/07/98
Manufacturers Samco Inc.

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