Molecular beam epitaxy system

Equipment/facility: Equipment

  • Location

    科三館617室

    Taiwan

Equipments Details

Description

重要規格: (1) 可使用晶圓尺寸:破片至2吋. (2) 原、離子源: Zn,Cd,Mg,Se,Te,Mn,Cr,O2,N2,ZnCl2。

服務項目:二六族化合物半導體磊晶成長。
Photo associated with equipment

Details

NameModel 35-V-2
Acquisition date6/08/10
ManufacturersSVT Associates, Inc.

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