Equipments Details
Description
重要規格: (1) 腔體(chamber):6",均溫區長度600mm. (2) 真空:5*10-3 Torr. (3) 溫度:POLY-Si-620°C,Si3N4-800°C,TEOS-700°C服務項目: (1) 多晶矽沉積摻雜磷化氫(Poly-Si in-situ PH3)溫度:585°C氣體:SiH4,PH3壓力:500mtorr(2) 多晶矽及非晶矽的沈積(poly-Si & amorphous-Si),矽鍺沉積(SiGe)溫度:620°C/550°C氣體:SiH4,GeH4壓力:300mtorr(3) 氮化矽的沈積(Si3N4)溫度:800°C/850°C氣體:SiH2Cl2,NH3壓力:120mtorr(4) TEOS的沈積溫度:700°C氣體:TEOS壓力:120mtorr

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Details
Name | SJ-10301001-1 |
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Acquisition date | 28/12/14 |
Manufacturers | SJ |
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