Low Pressure Chemical Vapor Deposition System (LPCVD)

Equipment/facility: Equipment

  • Location

    固態電子系統大樓 1樓127實驗室

    Taiwan

Equipments Details

Description

重要規格: (1) 腔體(chamber):6",均溫區長度600mm. (2) 真空:5*10-3 Torr. (3) 溫度:POLY-Si-620°C,Si3N4-800°C,TEOS-700°C服務項目: (1) 多晶矽沉積摻雜磷化氫(Poly-Si in-situ PH3)溫度:585°C氣體:SiH4,PH3壓力:500mtorr(2) 多晶矽及非晶矽的沈積(poly-Si & amorphous-Si),矽鍺沉積(SiGe)溫度:620°C/550°C氣體:SiH4,GeH4壓力:300mtorr(3) 氮化矽的沈積(Si3N4)溫度:800°C/850°C氣體:SiH2Cl2,NH3壓力:120mtorr(4) TEOS的沈積溫度:700°C氣體:TEOS壓力:120mtorr
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Details

NameSJ-10301001-1
Acquisition date28/12/14
ManufacturersSJ

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