Low Pressure Chemical Vapor Deposition System (LPCVD)

Department of Photonics

Equipment/facility: Equipment

  • Location

    固態電子系統大樓 1樓127實驗室

    Taiwan

Equipments Details

Description

重要規格： (1) 腔體（chamber)：6"，均溫區長度600mm. (2) 真空：5*10-3 Torr. (3) 溫度：POLY-Si-620°C，Si3N4-800°C，TEOS-700°C服務項目： (1) 多晶矽沉積摻雜磷化氫(Poly-Si in-situ PH3)溫度：585°C氣體：SiH4，PH3壓力：500mtorr(2) 多晶矽及非晶矽的沈積(poly-Si & amorphous-Si)，矽鍺沉積(SiGe)溫度：620°C/550°C氣體：SiH4，GeH4壓力：300mtorr(3) 氮化矽的沈積(Si3N4)溫度：800°C/850°C氣體：SiH2Cl2，NH3壓力：120mtorr(4) TEOS的沈積溫度：700°C氣體：TEOS壓力：120mtorr
Photo associated with equipment

Details

NameSJ-10301001-1
Acquisition date28/12/14
ManufacturersSJ

Contact Information

NamePo-Tsun Liu
Phone賴玟言 先生 (TEL：03-5712121-55606、55616)
Emailswhite@nctu.edu.tw
Web addressesWebsite, Booking/Management

Terms of loan/booking

Available for loan - internal and external

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