III-V Molecular Beam Epitaxy System

Equipment/facility: Equipment

  • Location

    奈米中心R110實驗室

    Taiwan

Equipments Details

Description

重要規格:(1) High Vacuum Growth chamber:Pressure < 5x10-10 torr. (2)Source Material:Ga、Al、In、As、Sb. (3) Doping Source:Be、Si、Te. (4) Max substrate Size:3 inch. (5) Epitaxy Layer thickness Variation < 5%. (6) The highest growth temperature:640℃. (7) In-situ rsidual gas analysis (RGA) and reflection high energy electron diffraction (RHEED, 15kV). (8) Regular monitoring epitaxy layer growth rate and quality.
服務內容:砷化物樣品委託成長、銻化物樣品委託成長、特殊結構測試費用

Details

NameIII-V Molecular Beam Epitaxy System
Acquisition date1/08/04
ManufacturersVeeco Instruments Inc.

Fingerprint Explore the research areas in which this equipment has been used. These labels are generated based on the related outputs. Together they form a unique fingerprint.