Equipments Details
Description
功能: (1) 乾式蝕刻,以蝕刻Al材料為主
重要規格: (1) 使用氣體包含BCl3、Cl2、CF4、CHF3、Ar、O2、SF6,ICP RF最大功率900W,Bias RF最大功率300W,以He gas系統冷卻,4" wafer為主。
重要規格: (1) 使用氣體包含BCl3、Cl2、CF4、CHF3、Ar、O2、SF6,ICP RF最大功率900W,Bias RF最大功率300W,以He gas系統冷卻,4" wafer為主。

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Details
Name | HDP-RIE |
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Acquisition date | 10/03/99 |
Manufacturers | 慶康科技 |
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