Dielectric Material RIE 200L

    Bing-Yue Tsui (Manager), 進章 胡 (Operator) & 正維 李 (Operator)

Equipment/facility: Equipment

  • Location

    固態電子系統大樓 1樓116實驗室

    Taiwan

Equipments Details

Description

功能:
蝕刻二氧化矽、氮化矽及未經後段製程之High-K(ALD,MOCVD)等材料
重要規格: (1) RF產生器最大可輸出300W,頻率13.56MHz,本蝕刻系統可通入CF4、O2、SF6、CHF3等氣體蝕刻二氧化矽、氮化矽等材料。(試片上不得有摻雜及金屬材料)

Details

NameSamCo RIE200L
Acquisition date1/12/02
Manufacturers Samco Inc.

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