Equipments Details
Description
功能:
蝕刻二氧化矽、氮化矽及未經後段製程之High-K(ALD,MOCVD)等材料
重要規格: (1) RF產生器最大可輸出300W,頻率13.56MHz,本蝕刻系統可通入CF4、O2、SF6、CHF3等氣體蝕刻二氧化矽、氮化矽等材料。(試片上不得有摻雜及金屬材料)
蝕刻二氧化矽、氮化矽及未經後段製程之High-K(ALD,MOCVD)等材料
重要規格: (1) RF產生器最大可輸出300W,頻率13.56MHz,本蝕刻系統可通入CF4、O2、SF6、CHF3等氣體蝕刻二氧化矽、氮化矽等材料。(試片上不得有摻雜及金屬材料)

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Details
Name | SamCo RIE200L |
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Acquisition date | 1/12/02 |
Manufacturers | Samco Inc. |
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