Equipments Details
Description
重要規格: (1) 可使用晶圓尺寸:破片至8吋. (2) 雙腔體:Chamber A-前段介電層薄膜沉積,Chamber B-後段介電層和金屬薄膜沉積. (3) 可進行熱沉積(thermal deposition)及電漿輔助沉積(plasma-enhanced deposition) (4) 使用氣體:Ar、N2、O2、NH3、H2、CF4。
服務項目: (1) 沉積Al2O3、HfO2、TiN、TiO2薄膜。
服務項目: (1) 沉積Al2O3、HfO2、TiN、TiO2薄膜。

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Details
Name | Cambridge NanoTech Fiji-202 DCS |
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Acquisition date | 1/01/09 |
Manufacturers | Cambridge NanoTech |
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